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profet ? bts611l1 semiconductor group page 1 of 15 20.dec.96 smart two channel highside power switch features overload protection current limitation short circuit protection thermal shutdown overvoltage protection (including load dump) fast demagnetization of inductive loads reverse battery protection 1 ) undervoltage and overvoltage shutdown with auto-restart and hysteresis open drain diagnostic output open load detection in on-state cmos compatible input loss of ground and loss of v bb protection e lectro s tatic d ischarge ( esd ) protection application m c compatible power switch with diagnostic feedback for 12 v and 24 v dc grounded loads all types of resistive, inductive and capacitve loads replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input and diagnostic feedback, monolithically integrated in smart sipmos a technology. fully protected by embedded protection functions. + v bb in1 st signal gnd esd profet a out1 gnd logic voltage sensor voltage source open load detection 1 short to vbb level shifter temperature sensor 1 rectifier 1 limit for unclamped ind. loads 1 gate 1 protection current limit 1 3 5 2 4 1 load gnd load v logic overvoltage protection out2 open load detection 2 short to vbb level shifter temperature sensor 2 rectifier 2 limit for unclamped ind. loads 2 gate 2 protection current limit 2 7 in2 6 gnd rr o1 o2 charge pump 1 charge pump 2 1 ) with external current limit (e.g. resistor r gnd =150 w ) in gnd connection, resistor in series with st connection, reverse load current limited by connected load. product summary overvoltage protection v bb(az) 43 v operating voltage v bb(on) 5.0 ... 34 v channels: each both parallel on-state resistance r on 200 100 m w load current (iso) , /,62 2.3 4.4 a current limitation , /6&u 44a to-220ab/7 1 7 standard 1 7 straight leads 1 7 smd
bts611l1 semiconductor group page 2 20.dec.96 pin symbol function 1 out1 (load, l) output 1, protected high-side power output of channel 1 2 gnd logic ground 3 in1 input 1, activates channel 1 in case of logical high signal 4v bb positive power supply voltage, the tab is shorted to this pin 5st diagnostic feedback: open drain, low on failure 6 in2 input 2, activates channel 2 in case of logical high signal 7 out2 (load, l) output 2, protected high-side power output of channel 2 maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 4) v bb 43 v supply voltage for full short circuit protection t j start =-40 ...+150c v bb 34 v load dump protection 2 ) v loaddump = u a + v s , u a = 13.5 v r i 3 ) = 2 w , r l = 5.3 w , t d = 200 ms, in= low or high v load dump 4 ) 60 v load current (short circuit current, see page 5) i l self-limited a operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc), t c 25 c p tot 36 w inductive load switch-off ener gy dissipation, sin g le pulse v bb = 12v, t j,start = 150c, t c = 150c const. one channel, i l = 2.3 a, z l = 89 mh, 0 w : e as 290 mj both channels parallel, i l = 4.4 a, z l = 47 mh, 0 w : 580 see diagrams on page 9 electrostatic dischar g e capabilit y ( esd ) in: ( human bod y model ) all other pins: acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993 v esd 1.0 2.0 kv input voltage (dc) v in -10 ... +16 v current through input pin (dc) current through status pin (dc) see internal circuit diagrams page 7 i in i st 2.0 5.0 ma 2 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins, e.g. with a 150 w resistor in the gnd connection and a 15 k w resistor in series with the status pin. a resistor for the protection of the input is integrated. 3) r i = internal resistance of the load dump test pulse generator 4) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839
bts611l1 semiconductor group page 3 20.dec.96 thermal characteristics parameter and conditions symbol values unit min typ max thermal resistance chip - case, both channels: each channel: junction - ambient (free air): r thjc r thja -- -- -- -- -- -- 3.5 7.0 75 k/w smd version, device on pcb 5) :37 5 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m m thick) copper area for v bb connection. pcb is vertical without blown air. electrical characteristics parameter and conditions, each channel symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 4 to 1 or 7) i l = 1.8 a t j =25 c: each channel t j =150 c: r on -- 160 320 200 400 m w nominal load current, iso norm (pin 4 to 1 or 7) v on = 0.5 v, t c = 85 c each channel: both channels parallel: i l(iso) 1.8 3.5 2.3 4.4 -- -- a output current (pin 1 or 7) while gnd disconnected or gnd pulled up, v bb =30 v, v in = 0, see diagram page 8 i l(gndhigh) -- -- 10 ma turn-on time in to 90% v out : turn-off time in to 10% v out : r l = 12 w , t j =-40...+150c t on t off 80 80 200 200 400 400 m s slew rate on 10 to 30% v out , r l = 12 w , t j =-40...+150c d v /dt on 0.1 -- 1 v/ m s slew rate off 70 to 40% v out , r l = 12 w , t j =-40...+150c -d v /dt off 0.1 -- 1 v/ m s
bts611l1 parameter and conditions, each channel symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 4 20.dec.96 operating parameters operating voltage 6 ) t j = -40...+150c: v bb(on) 5.0 -- 34 v undervoltage shutdown t j =-40...+150c: v bb(under) 3.5 -- 5.0 v undervolta g e restart t j =-40...+25c: t j =+150c: v bb(u rst) -- -- 5.0 7.0 v undervolta g e restart of char g e pump see diagram page 13 v bb(ucp) -- 5.6 7.0 v undervoltage hysteresis d v bb(under) = v bb(u rst) - v bb(under) d v bb(under) -- 0.2 -- v overvoltage shutdown t j =-40...+150c: v bb(over) 34 -- 43 v overvoltage restart t j =-40...+150c: v bb(o rst) 33 -- -- v overvoltage hysteresis t j =-40...+150c: d v bb(over) -- 0.5 -- v overvoltage protection 7 ) t j =-40...+150c: i bb =40 ma v bb(az) 42 47 -- v standby current (pin 4) v in =0 t j =-40...+25c : t j = 150c: i bb(off) -- -- 14 17 30 35 m a leakage output current (included in i bb(off) ) v in =0 i l(off) -- -- 12 m a operating current (pin 2) 8) , v in =5 v both channels on, t j =-40...+150c i gnd -- 4 6 ma operating current (pin 2) 8) one channel on, t j =-40...+150c: i gnd -- 2 3 ma 6) at supply voltage increase up to v bb = 5.6 v typ without charge pump, v out ? v bb - 2 v 7) see also v on(cl) in table of protection functions and circuit diagram page 8. 8 ) add i st , if i st > 0, add i in , if v in >5.5 v
bts611l1 parameter and conditions, each channel symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 5 20.dec.96 protection functions initial peak short circuit current limit (pin 4 to 1 or 7) i l(scp) t j = -40c: t j =25c: t j =+150c: 5.5 4.5 2.5 9.5 7.5 4.5 13 11 7 a repetitive short circuit shutdown current limit i l(scr) t j = t jt (see timing diagrams, page 11) -- 4 -- a output clamp (inductive load switch off) at v out = v bb - v on(cl) i l = 40 ma: v on(cl) 41 47 53 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis d t jt -- 10 -- k reverse battery (pin 4 to 2) 9 ) - v bb -- -- 32 v reverse battery voltage drop (v out > v bb ) i l = -1.8 a, each channel t j =150 c: -v on(rev) -- 610 -- mv diagnostic characteristics open load detection current t j =-40 c : (on-condition) t j =25 ..150c: i l (ol) 10 10 -- -- 200 150 ma open load detection voltage 10 ) (off-condition) t j =-40..150c: v out(ol) 234v internal output pull down (pin 1 or 7 to 2), v out =5 v, t j =-40..150c r o 41030k w 9 ) requires 150 w resistor in gnd connection. the reverse load current through the intrinsic drain-source diode has to be limited by the connected load. note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 2 and circuit page 8). 10) external pull up resistor required for open load detection in off state.
bts611l1 parameter and conditions, each channel symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 6 20.dec.96 input and status feedback 11 ) input resistance t j = -40..150c, see circuit page 7 r i 2.5 3.5 6 k w input turn-on threshold voltage t j =-40..+150c: v in(t+) 1.7 -- 3.5 v input turn-off threshold voltage t j =-40..+150c: v in(t-) 1.5 -- -- v input threshold hysteresis d v in(t) -- 0.5 -- v off state input current (pin 3 or 6), v in = 0.4 v, t j =-40..+150c i in(off) 1--50 m a on state input current (pin 3 or 6), v in = 3.5 v, t j =-40..+150c i in(on) 20 50 90 m a delay time for status with open load after switch off (other channel in off state) (see timing diagrams, page 12 ), t j =-40..+150c t d(st ol4) 100 320 800 m s delay time for status with open load after switch off (other channel in on state) (see timing diagrams, page 12 ), t j =-40..+150c t d(st ol5) -- 5 20 m s status invalid after positive input slope (open load) t j =-40 ... +150c: t d(st) -- 200 600 m s status output (open drain) zener limit voltage t j =-40...+150c, i st = +1.6 ma: st low voltage t j =-40...+25c, i st = +1.6 ma: t j = +150c, i st = +1.6 ma: v st(high) v st(low) 5.4 -- -- 6.1 -- -- -- 0.4 0.6 v 11) if a ground resistor r gnd is used, add the voltage drop across this resistor.
bts611l1 semiconductor group page 7 20.dec.96 truth table in1 in2 out1 out2 st st bts611l1 bts612n1 normal operation l l h h l h l h l l h h l h l h h h h h h h h h open load channel 1 l l h l h x z z h l h x h(l 12 ) ) h l l h h channel 2 l h x l l h l h x z z h h(l 12 ) ) h l l h h short circuit to v bb channel 1 l l h l h x h h h l h x l 13 ) h h(l 14 ) ) l h h channel 2 l h x l l h l h x h h h l 13) h h(l 14 ) ) l h h overtemperature both channel l x h l h x l l l l l l h l l h l l channel 1 l h x x l l x x h l h l channel 2 x x l h x x l l h l h l undervoltage/ overvoltage x x l l h h l = "low" level x = don't care z = high impedance, potential depends on external circuit h = "high" level status signal after the time delay shown in the diagrams (see fig 5. page 12...13) 12 ) with additional external pull up resistor 13) an external short of output to v bb , in the off state, causes an internal current from output to ground. if r gnd is used, an offset voltage at the gnd and st pins will occur and the v st low signal may be errorious. 14 ) low resistance to v bb may be detected in the on-state by the no-load-detection terms profet v in2 st out2 gnd bb v st v in1 i st i in1 v bb i bb i l2 v out2 i gnd v on2 1 2 4 3 5 in1 v in2 i in2 v out1 v on1 i l1 out1 6 7 r gnd input circuit (esd protection) in gnd i r esd-zd i i i esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v).
bts611l1 semiconductor group page 8 20.dec.96 status output st gnd esd- zd +5v r st(on) esd-zener diode: 6.1 v typ., max 5 ma; r st(on) < 380 w at 1.6 ma, esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). inductive and overvoltage output clamp + v bb out gnd profet v z v on v on clamped to 47 v typ. overvolt. and reverse batt. protection + v bb in2 st st r gnd gnd r signal gnd logic v z2 in1 r i v z1 v z1 = 6.1 v typ., v z2 = 47 v typ., r i = 3.5 k w typ , r gnd = 150 w open-load detection on-state diagnostic condition: v on < r on * i l(ol) ; in high open load detection logic unit + v bb out on v on off-state diagnostic condition: v out > 3 v typ.; in low open load detection logic unit v out signal gnd r ext r o off gnd disconnect profet v in2 st out2 gnd bb v bb i bb 1 2 4 3 5 in1 out1 6 7 v in1 v in2 v st v gnd any kind of load. in case of input=high is v out ? v in - v in(t+) . due to v gnd >0, no v st = low signal available.
bts611l1 semiconductor group page 9 20.dec.96 gnd disconnect with gnd pull up profet v in2 st out2 gnd bb v bb 1 2 4 3 5 in1 out1 6 7 v in1 v in2 v st v gnd any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd >0, no v st = low signal available. v bb disconnect with energized inductive load profet v in2 st out2 gnd bb v bb 1 2 4 3 5 in1 out1 6 7 high normal load current can be handled by the profet itself. v bb disconnect with charged external inductive load profet v in2 st out2 gnd bb 1 2 4 3 5 in1 out1 6 7 v bb high d if other external inductive loads l are connected to the profet, additional elements like d are necessary. inductive load switch-off energy dissipation profet v in st out gnd bb = e e e e as bb l r e load l r l { z l energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 w : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off (both channels parallel) l = f (i l ); t j,start = 150c, t c = 150c const., v bb = 12 v, r l = 0 w l [mh] 1 10 100 1000 2345678 i l [a]
bts611l1 semiconductor group page 10 20.dec.96 typ. transient thermal impedance chip case z thjc = f (t p ), one channel active z thjc [k/w] 0.01 0.1 1 10 1e-5 1e-4 1e-3 1e-2 1e-1 1e0 1e1 0 0.01 0.02 0.05 0.1 0.2 0.5 d= t p [s] typ. transient thermal impedance chip case z thjc = f (t p ), both channel active z thjc [k/w] 0.01 0.1 1 10 1e-5 1e-4 1e-3 1e-2 1e-1 1e0 1e1 0 0.01 0.02 0.05 0.1 0.2 0.5 d= t p [s]
bts611l1 semiconductor group page 11 20.dec.96 timing diagrams both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels figure 1a: v bb turn on: in2 v out1 t v bb st open drain in1 v out2 figure 2a: switching a lamp: in st out l t v i figure 2b: switching an inductive load in st l t v i *) out t d(st) i l(ol) *) if the time constant of load is too large, open-load-status may occur figure 3a: short circuit shut down by overtempertature, reset by cooling in st l t i other channel: normal operation l(scr) i i l(scp) heating up may require several milliseconds, depending on external conditions
bts611l1 semiconductor group page 12 20.dec.96 figure 4a: overtemperature: reset if t j < t jt in st out j t v t figure 5a: open load: detection in on-state, open load occurs in on-state in2 channel 2: normal operation out1 t v st in1 i l1 t d(st ol1) t d(st ol2) t d(st ol1) t d(st ol2) open load open load normal load channel 1: t d(st ol1) = 30 m s typ., t d(st ol2) = 20 m s typ figure 5b: open load: detection in on-state, turn on/off to open load out1 t v st in1 i l1 t d(st) t d(st ol4) t d(st) t d(st ol5) in2 channel 2: normal operation channel 1: open load figure 5c: open load: detection in on- and off-state (with r ext ), turn on/off to open load t v st in1 i l1 t d(st) d(st ol5) channel 1: open load t d(st) t out1 in2 channel 2: normal operation t d(st ol5) depends on external circuitry because of high impedance
bts611l1 semiconductor group page 13 20.dec.96 figure 6a: undervoltage: in v out t v bb st open drain v v bb(under) bb(u rst) bb(u cp) v figure 6b: undervoltage restart of charge pump bb(under) v v bb(u rst) v bb(over) v bb(o rst) v bb(u cp) off-state on-state v on(cl) v bb v on off-state charge pump starts at v bb(ucp) =5.6 v typ. figure 7a: overvoltage: in v out t v bb st on(cl) v v bb(over) v bb(o rst)
bts611l1 semiconductor group page 14 20.dec.96 package and ordering code all dimensions in mm standard to-220ab/7 ordering code bts611l1 q67060-s6302-a2 to 220ab/7, opt. e3230 ordering code bts611l1 e3230 q67060-s6314 smd to 220ab/7, opt. e3128 ordering code bts611l1 e3128a t&r: q67060-s6302-a4 changed since 04.96 date change dec 1996 t d(st ol4) max reduced from 1500 to 800s, typical from 400 to 320s, min limit unchanged e as maximum rating and diagram and zthjc diagram added esd capability increased typ. reverse battery voltage drop - v on(rev) added
bts611l1 semiconductor group page 15 20.dec.96 published by siemens ag, bereich bauelemente, vertrieb, produkt-information, balanstra?e 73, d-81541 mnchen ? siemens ag 1999. all rights reserved as far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assem- blies. the information describes a type of component and shall not be considered as warranted characteristics. the characteristics for which siemens grants a warranty will only be specified in the purchase contract. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the offices of semiconductor group in germany or the siemens companies and representatives woldwide (see address list). due to technical requirements components may contain dan- gerous substances. for information on the type in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing: please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is re- turned to us unsorted or which we are not obliged to accept we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorised for such purpose! critical components 15 ) of the semiconductor group of siemens ag, may only be used in life supporting devices or systems 16 ) with the express written approval of the semiconductor group of siemens ag. 15) a critical component is a component used in a life-support device or system whose failure can reas onably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 16) life support devices or systems are int ended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. if they fail, it is reasonably to assume that the health of the user or other persons may be endangered.

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